Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices

J Shi, J Zhang, L Yang, M Qu, DC Qi… - Advanced …, 2021 - Wiley Online Library
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …

T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim… - Advanced …, 2023 - Wiley Online Library
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

Multifunctional latex/polytetrafluoroethylene-based triboelectric nanogenerator for self-powered organ-like MXene/metal–organic framework-derived CuO nanohybrid …

D Wang, D Zhang, Y Yang, Q Mi, J Zhang, L Yu - ACS nano, 2021 - ACS Publications
Self-powered sensors are crucial in the field of wearable devices and the Internet of Things
(IoT). In this paper, an organ-like Ti3C2T x MXene/metal–organic framework-derived copper …

A review of phototransistors using metal oxide semiconductors: Research progress and future directions

H Yoo, IS Lee, S Jung, SM Rho, BH Kang… - Advanced …, 2021 - Wiley Online Library
Metal oxide thin‐film transistors have been continuously researched and mass‐produced in
the display industry. However, their phototransistors are still in their infancy. In particular …

Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

T Kim, CH Choi, P Byeon, M Lee, A Song… - npj 2D Materials and …, 2022 - nature.com
Achieving high-performance p-type semiconductors has been considered one of the most
challenging tasks for three-dimensional vertically integrated nanoelectronics. Although …

Latest directions in p-type transparent conductor design

J Willis, DO Scanlon - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Transparent conducting materials (TCMs) are crucial in the operation of modern opto-
electronic devices, combining the lucrative properties of optical transparency and electronic …

Cu2O p-type Thin-Film Transistors with Enhanced Switching Characteristics for CMOS Logic Circuit by Controlling Deposition Condition and Annealing in the N2 …

JH Lee, J Kim, M Jin, HJ Na, H Lee, C Im… - ACS Applied Electronic …, 2023 - ACS Publications
Cuprous oxide (Cu2O) p-type thin-film transistors (TFTs) can be practically applied for
complementary metal oxide semiconductor (CMOS) logic circuits, but the electrical …

Recent progress of oxide-TFT-based inverter technology

K Nomura - Journal of Information Display, 2021 - Taylor & Francis
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained
significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous …

Oxide semiconductor heterojunction transistor with negative differential transconductance for multivalued logic circuits

JC Shin, JH Lee, M Jin, H Lee, J Kim, J Lee, C Lee… - ACS …, 2024 - ACS Publications
Multivalued logic (MVL) technology is a promising solution for improving data density and
reducing power consumption in comparison to complementary metal-oxide-semiconductor …

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

J Kim, JB Park, D Zheng, JS Kim, Y Cheng… - Advanced …, 2022 - Wiley Online Library
Thin‐film transistors using metal oxide semiconductors are essential in many
unconventional electronic devices. Nevertheless, further advances will be necessary to …