ASML's NXE platform performance and volume introduction
R Peeters, S Lok, E van Alphen… - Extreme Ultraviolet …, 2013 - spiedigitallibrary.org
All six NXE: 3100, 0.25 NA EUV exposure systems are in use at customer sites enabling
device development and cycles of learning for early production work in all lithographic …
device development and cycles of learning for early production work in all lithographic …
EUV lithography technology for high-volume production of semiconductor devices
J Miyazaki, A Yen - Journal of Photopolymer Science and …, 2019 - jstage.jst.go.jp
After years of efforts, extreme-ultraviolet (EUV) lithography reached a significant milestone in
2018: readiness for high-volume production of advanced semiconductor devices. A EUV …
2018: readiness for high-volume production of advanced semiconductor devices. A EUV …
EUV lithography: NXE platform performance overview
R Peeters, S Lok, J Mallman… - … EUV) Lithography V, 2014 - spiedigitallibrary.org
The first NXE3300B systems have been qualified and shipped to customers. The NXE:
3300B is ASML's third generation EUV system and has an NA of 0.33. It succeeds the NXE …
3300B is ASML's third generation EUV system and has an NA of 0.33. It succeeds the NXE …
Additive lithography–organic monolayer patterning coupled with an area-selective deposition
R Wojtecki, J Ma, I Cordova, N Arellano… - … applied materials & …, 2021 - ACS Publications
The combination of area-selective deposition (ASD) with a patternable organic monolayer
provides a versatile additive lithography platform, enabling the generation of a variety of …
provides a versatile additive lithography platform, enabling the generation of a variety of …
Performance of one hundred watt HVM LPP-EUV source
H Mizoguchi, H Nakarai, T Abe… - Extreme Ultraviolet …, 2015 - spiedigitallibrary.org
We have been developing CO 2-Sn-LPP EUV light source which is the most promising
solution as the 13.5 nm high power light source for HVM EUVL. Unique and original …
solution as the 13.5 nm high power light source for HVM EUVL. Unique and original …
Sub-hundred Watt operation demonstration of HVM LPP-EUV Source
H Mizoguchi, H Nakarai, T Abe, T Ohta… - … EUV) Lithography V, 2014 - spiedigitallibrary.org
Since 2002, we have been developing a CO 2-Sn-LPP EUV light source, the most promising
solution as the 13.5 nm high power (> 200 W) light source for HVM EUV lithography …
solution as the 13.5 nm high power (> 200 W) light source for HVM EUV lithography …
100W 1st Generation Laser-Produced Plasma light source system for HVM EUV lithography
H Mizoguchi, T Abe, Y Watanabe… - … (EUV) Lithography II, 2011 - spiedigitallibrary.org
We reported 1st generation Laser-Produced Plasma source system" ETS" device for EUV
lithography one year ago1). In this paper we update performance status of the 1st …
lithography one year ago1). In this paper we update performance status of the 1st …
Recent progress in source development for extreme UV lithography
The continuation of Moore's law for semiconductor fabrication envisages the introduction of
extreme ultraviolet lithography (EUVL) based on a source wavelength of 13.5 nm for high …
extreme ultraviolet lithography (EUVL) based on a source wavelength of 13.5 nm for high …
Carbon contamination and oxidation of Au surfaces under extreme ultraviolet radiation: An x-ray photoelectron spectroscopy study
Extreme ultraviolet (EUV) radiation-induced carbon contamination and oxidation of Au
surfaces were investigated using x-ray photoelectron spectroscopy (XPS). The Au sample …
surfaces were investigated using x-ray photoelectron spectroscopy (XPS). The Au sample …
LPP-EUV light source development for high volume manufacturing lithography
H Mizoguchi, H Nakarai, T Abe, T Ohta… - Extreme Ultraviolet …, 2013 - spiedigitallibrary.org
Since 2002, we have been developing a CO 2-Sn-LPP EUV light source, the most promising
solution as the 13.5 nm high power (> 200 W) light source for HVM EUV lithography …
solution as the 13.5 nm high power (> 200 W) light source for HVM EUV lithography …