A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution
M Kuball, JW Pomeroy - IEEE Transactions on Device and …, 2016 - ieeexplore.ieee.org
We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …
temperature in and around the active area of semiconductor devices with submicron spatial …
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
Measurement of channel temperature in GaN high-electron mobility transistors
J Joh, JA Del Alamo, U Chowdhury… - … on Electron Devices, 2009 - ieeexplore.ieee.org
In this paper, a simple and reliable method to estimate the channel temperature of GaN high-
electron mobility transistors (HEMTs) is proposed. The technique is based on electrical …
electron mobility transistors (HEMTs) is proposed. The technique is based on electrical …
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
MH Wong, Y Morikawa, K Sasaki, A Kuramata… - Applied Physics …, 2016 - pubs.aip.org
The channel temperature (T ch) and thermal resistance (R th) of Ga 2 O 3 metal-oxide-
semiconductor field-effect transistors were investigated through electrical measurements …
semiconductor field-effect transistors were investigated through electrical measurements …
Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy
RJT Simms, JW Pomeroy, MJ Uren… - … on Electron Devices, 2008 - ieeexplore.ieee.org
Self-heating in AlGaN/GaN HFETs was investigated using electrical analysis and micro-
Raman thermography. Two typically employed electrical methods were assessed to provide …
Raman thermography. Two typically employed electrical methods were assessed to provide …
Drain current stability and controllability of threshold voltage and subthreshold current in a multi-mesa-channel AlGaN/GaN high electron mobility transistor
K Ohi, T Hashizume - Japanese Journal of Applied Physics, 2009 - iopscience.iop.org
The surrounding-field effect in a multi-mesa-channel (MMC) with an AlGaN/GaN structure, in
which a periodic trench structure is fabricated directly under a gate electrode, was …
which a periodic trench structure is fabricated directly under a gate electrode, was …
Electric field and self-heating effects on the emission time of iron traps in GaN HEMTs
In this article, we separately investigate the role of electric field and device self-heating
(SHE) in enhancing the charge emission process from Fe-related buffer traps (0.52 eV from …
(SHE) in enhancing the charge emission process from Fe-related buffer traps (0.52 eV from …
Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs
S Martin-Horcajo, A Wang, MF Romero… - … on Electron Devices, 2013 - ieeexplore.ieee.org
Self-heating effects in AlGaN/GaN high-electron mobility transistors grown on three different
substrates have been evaluated for ambient temperatures between 0° C and 225° C. A …
substrates have been evaluated for ambient temperatures between 0° C and 225° C. A …
Accurate modeling of GaN HEMT RF behavior using an effective trapping potential
This paper investigates the back-gating effects due to traps, and presents a new nonlinear
trap modeling approach suitable for gallium nitride (GaN) high electron mobility transistors …
trap modeling approach suitable for gallium nitride (GaN) high electron mobility transistors …
Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors
Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel
(MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with …
(MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with …