Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many
places are now providing a substantial portion of electricity generation. Further adoption of …

The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …

Although several advances have been made in the characterization and the mitigation of
light-induced degradation (LID), industrial silicon solar cells still suffer from different types of …

Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing
high quality, uniform and conformal thin films at relatively low temperatures. These …

PERC cell is currently entering the industrial crystalline silicon solar cell production lines.
While there has been many reports focusing on research PERCs, this paper aims to present …

The material properties and c-Si surface passivation have been investigated for films
deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced …

The role of hydrogen in Si surface passivation is experimentally identified for Al 2 O 3
(capping) films synthesized by atomic layer deposition. By using stacks of SiO 2 and …

Light‐induced degradation (LID) has been identified to be a critical issue for solar cells
processed on boron‐doped silicon substrates. Typically, Czochralski‐grown silicon (Cz‐Si) …

Annealing at moderate temperatures is required to activate the silicon surface passivation by
Al 2 O 3 thin films while also the thermal stability at higher temperatures is important when Al …

Many reported atomic layer deposition (ALD) processes are carried out at elevated
temperatures, which can be problematic for temperature-sensitive substrates. Plasma …