Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
[HTML][HTML] The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
[HTML][HTML] Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …
Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
[HTML][HTML] 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the …
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the …
[HTML][HTML] Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
A Knauer, T Kolbe, S Hagedorn, J Hoepfner… - Applied Physics …, 2023 - pubs.aip.org
High temperature annealed AlN/sapphire templates exhibit a reduced in-plane lattice
constant compared to conventional non-annealed AlN/sapphire grown by metalorganic …
constant compared to conventional non-annealed AlN/sapphire grown by metalorganic …
Milliwatt-power sub-230-nm AlGaN LEDs with> 1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection
H Kobayashi, K Sato, Y Okuaki, TG Lee… - Applied Physics …, 2023 - pubs.aip.org
We fabricated sub-230-nm (far UV-C) light emitting diodes (LEDs) on a single-crystal AlN
substrate. With 20 quantum well cycles implemented to enhance carrier injection into the …
substrate. With 20 quantum well cycles implemented to enhance carrier injection into the …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …