Development of semiconductor based heavy metal ion sensors for water analysis: A review
Heavy metal ions are highly toxic, carcinogens, and non-biodegradable in nature and
pollute most water resources that lead to severe health-related issues. It is essential to …
pollute most water resources that lead to severe health-related issues. It is essential to …
Electronic biosensors based on III-nitride semiconductors
We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …
Mercury (II) selective sensors based on AlGaN/GaN transistors
This work presents the first polymer approach to detect metal ions using AlGaN/GaN
transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor …
transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor …
MPA-GSH functionalized AlGaN/GaN high-electron mobility transistor-based sensor for cadmium ion detection
This paper demonstrates a novel AlGaN/GaN high-electron mobility transistor (HEMT)-
based cadmium ion (Cd 2+) sensor with mercapto propionic acid (MPA) and glutathione …
based cadmium ion (Cd 2+) sensor with mercapto propionic acid (MPA) and glutathione …
Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring
AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated their
extraordinary potential in developing solid-state microsensors for detecting gases, metal …
extraordinary potential in developing solid-state microsensors for detecting gases, metal …
DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT
Abstract In this work, High Electron Mobility Transistor is grown on various Substrates such
as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold …
as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold …
Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
M Myers, FLM Khir, A Podolska… - Sensors and Actuators B …, 2013 - Elsevier
AlGaN/GaN heterostructure-based devices can be engineered through heterostructure
design to have a high transconductance near zero gate–drain voltage, potentially enabling …
design to have a high transconductance near zero gate–drain voltage, potentially enabling …
Linear and circular AlGaN/AlN/GaN MOS-HEMT-based pH sensor on Si substrate: A comparative analysis
A Varghese, C Periasamy, L Bhargava… - IEEE Sensors …, 2019 - ieeexplore.ieee.org
In this article, sensitivity enhancement of undoped AlGaN/AlN/GaN HEMT for pH detection
by using dielectric (10 nm Al 2 O 3)-based MOS-gated structure is demonstrated. Linear and …
by using dielectric (10 nm Al 2 O 3)-based MOS-gated structure is demonstrated. Linear and …
Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors
AlGaN/GaN-based pH sensors offer unique advantages of compact size, high sensitivity,
and compatibility with lab-on-a-chip technologies. However, under reference electrode-free …
and compatibility with lab-on-a-chip technologies. However, under reference electrode-free …
Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface
chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of …
chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of …