Ge-Based Asymmetric RRAM Enable Content Addressable Memory

B Chen, Y Zhang, W Liu, S Xu, R Cheng… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this work, we developed an asymmetric Ge-based RRAM using a fully CMOS compatible
process. Due to the adoption of a thin AlO x/GeO x interfacial layer, the TiN/HfO x/AlO x/GeO …

Overview of circuits, systems, and applications of spintronics

S Ghosh, A Iyengar, S Motaman… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
Spintronic technologies have demonstrated significant promise due to multitude of features
that can find applications in storage, cache, non-volatile combinational logic, sequential …

Design and analysis of STTRAM-based ternary content addressable memory cell

R Govindaraj, S Ghosh - ACM Journal on Emerging Technologies in …, 2017 - dl.acm.org
Content Addressable Memory (CAM) is widely used in applications where searching a
specific pattern of data is a major operation. Conventional CAMs suffer from area, power …

An optical content addressable memory cell for address look-up at 10 Gb/s

S Pitris, C Vagionas, P Maniotis… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
We propose and experimentally demonstrate the first all-optical content addressable
memory (CAM) cell that comprises an all-optical monolithically integrated InP flip-flop and an …

Spintronics for associative computation and hardware security

S Ghosh, R Govindaraj - 2015 IEEE 58th International Midwest …, 2015 - ieeexplore.ieee.org
Spintronic is one of the promising post-CMOS technology for energy and area efficient logic
and memory design. In this paper we present two promising applications of spintronics …

The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing

T Windbacher, A Makarov, S Selberherr… - … Efficient Computing & …, 2019 - taylorfrancis.com
This chapter presents a short introduction into the physics necessary to understand the
spintronic effects, like the magnetoresistance effect, spin-transfer torque, spin Hall effect, and …