Physical design fundamentals of high performance avalanche heterophotodiodes with separate absorption and multiplication regions
V Kholodnov, M Nikitin - Photodiodes-From Fundamentals to …, 2012 - books.google.com
Minimal value of dark current in reverse biased p− n junctions at avalanche breakdown is
determined by interband tunneling. For example, tunnel component of dark current be …
determined by interband tunneling. For example, tunnel component of dark current be …
[PDF][PDF] Аналитическое описание характеристик лавинных фотодиодов (обзор) Часть I
ИД Бурлаков, АМ Филачев, ВА Холоднов - Успехи прикладной физики, 2016 - cplire.ru
Успехи прикладной физики, 2016, том 4, № 1 53 ного пробоя, p–i–n-структура, p–n-
гетероструктура, лавинный гетерофотодиод, ЛГФД, разделенные области поглощения …
гетероструктура, лавинный гетерофотодиод, ЛГФД, разделенные области поглощения …
Analytical description of avalanche photodiode characteristics. an overview: Part II
ID Burlakov, AM Filachev, VA Kholodnov - Journal of Communications …, 2018 - Springer
This paper deals with the second part of the overview on analytical calculations of the
characteristics of avalanche photodiodes (APDs) based predominantly on direct gap …
characteristics of avalanche photodiodes (APDs) based predominantly on direct gap …
[图书][B] Design of an advanced positron emission tomography detector system and algorithms for imaging small animal models of human disease
AMK Foudray - 2009 - search.proquest.com
UNIVERSITY OF CALIFORNIA, SAN DIEGO Design of an Advanced Positron Emission
Tomography Detector System and Algorithms for Imagin Page 1 UNIVERSITY OF CALIFORNIA …
Tomography Detector System and Algorithms for Imagin Page 1 UNIVERSITY OF CALIFORNIA …
Silicon quantum detectors with large photosensitive surface
A Baranouski, A Zenevich, E Novikov - Recent Advances in Mechatronics, 2007 - Springer
Semiconductor light detectors are the part of vision and image processing systems. Pulse
amplitude distribution of silicon avalanche photodiodes with photosensitive surface 7 mm 2 …
amplitude distribution of silicon avalanche photodiodes with photosensitive surface 7 mm 2 …