High-Performance Acoustic Wave Devices on LiTaO3/SiC Hetero-Substrates
We present high-performance shear horizontal surface acoustic wave (SH-SAW) and
longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO3) thin films on …
longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO3) thin films on …
Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO/SiC Substrates
This work demonstrates a group of longitudinal leaky surface acoustic wave (LL-SAW)
resonators and filters using thin-film X-cut lithium niobate on silicon carbide (LiNbO3/SiC) …
resonators and filters using thin-film X-cut lithium niobate on silicon carbide (LiNbO3/SiC) …
Advanced Surface Acoustic Wave Resonators on LiTaO₃/SiO₂/Sapphire Substrate
The shear horizontal surface acoustic wave (SH-SAW) resonators with excellent quality
factor and temperature stability were fabricated on 42° YX-LiTaO3/SiO2/sapphire substrate …
factor and temperature stability were fabricated on 42° YX-LiTaO3/SiO2/sapphire substrate …
Gigahertz acoustic delay lines in lithium niobate on silicon carbide with propagation-Q of 11174
This work demonstrates gigahertz wideband acoustic delay lines (ADLs) with record-
breaking propagation-Q using a thin-film X-cut lithium niobate on silicon carbide (LiNbO3-on …
breaking propagation-Q using a thin-film X-cut lithium niobate on silicon carbide (LiNbO3-on …
Sub-3 DB Insertion Loss Broadband Acoustic Delay Lines and High Fom Resonators in LiNbO3/SiO2/Si Functional Substrate
CC Yeh, CH Tsai, GL Wu, TH Hsu… - 2023 IEEE 36th …, 2023 - ieeexplore.ieee.org
This work demonstrates high-performance shear-horizontal surface acoustic wave (SH-
SAW) delay lines at 910 MHz with low insertion loss (IL) of 2.6 dB and wide fractional …
SAW) delay lines at 910 MHz with low insertion loss (IL) of 2.6 dB and wide fractional …
Spurious Free SAW Resonators on LiNbO3/SiO2/ Quartz Substrate for Wideband Application
SummaryIn this work, the LiNbO 3/SiO 2/Quartz substrate (LiNbO 3-on-quartz, LNOQ) was
fabricated in wafer scale using ion-cut process. 3D finite element analysis was used to …
fabricated in wafer scale using ion-cut process. 3D finite element analysis was used to …
A comparative study of acoustic loss in piezoelectric on insulator (POI) substrates
This paper reports an experimental study of acoustic loss in multi-layer piezoelectric on
insulator (POI) substrates. The propagation loss (PL) of shear-horizontal surface acoustic …
insulator (POI) substrates. The propagation loss (PL) of shear-horizontal surface acoustic …
Quality factor degradation due to the in-plane misorientation in POI-SAW resonators
In this work, shear horizontal surface acoustic wave (SH-SAW) resonators with tiny
misorientation on Piezo-On-Insulator (POI) substrates were studied. POI-SAW resonators …
misorientation on Piezo-On-Insulator (POI) substrates were studied. POI-SAW resonators …
Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free …
ZH Qin, SM Wu, CB Hao, HY Chen, SN Liang… - arXiv preprint arXiv …, 2024 - arxiv.org
This work proposes a double-layer thin-film lithium niobate (LiNbO3) longitudinally excited
shear wave resonator with a theoretical electromechanical coupling coefficient exceeding …
shear wave resonator with a theoretical electromechanical coupling coefficient exceeding …