Abstract Integrating two-dimensional (2D) materials into the current nanoelectronic process
requires control over the deposition of gate oxides onto these materials. Atomic layer …

HfO_2 has promising applications in semiconductors and optics due to its high dielectric
constant and high refractive index. In this work, HfO_2 thin films were deposited by plasma …

Downscaling of complementary metal-oxide semiconductor (CMOS) gate stacks requires the
introduction of ultra-thin and high-k dielectrics such as HfO2. Atomic layer deposition (ALD) …

The quest for the high speed, low power digital logic circuits urge an imperative demand of
compatible high-κ dielectric integration on novel Germanium (Ge) based channel material …

With the increased application range of Hf-based oxides in memory devices, such as high-k
capacitors, gate dielectrics, and ferroelectric devices, improvement in the properties of HfO 2 …

In this study, we assessed the physical and chemical properties of HfO2 thin films deposited
by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature …

In this article, we discuss the synthesis of eight novel zirconium and hafnium complexes
containing amidoxime ligands as potential precursors for atomic layer deposition (ALD). Two …

Hafnium oxide (HfO2) is widely recognized as one of the most promising high-k dielectric
materials due to its remarkable properties such as high permittivity, wide band gap, and …

Hafnium oxide (HfOx) films grown by atomic layer deposition (ALD) have recently been
demonstrated to provide high‐quality silicon surface passivation. Reports have suggested …

The continuous scaling down of dynamic random access memory devices has necessitated
a comprehensive understanding of the initial growth mechanism in atomic layer deposition …