Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong… - ECS Journal of Solid …, 2016 - iopscience.iop.org
Abstract" Ultra" wide-bandgap semiconductors are an emerging class of materials with
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
Progress in efficient doping of high aluminum-containing group III-nitrides
YH Liang, E Towe - Applied Physics Reviews, 2018 - pubs.aip.org
The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …
that are critical to a number of technologies in modern life—the other being silicon. Light …
[HTML][HTML] Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs)
emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light …
emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light …
Graded AlGaN channel transistors for improved current and power gain linearity
We report on the small-signal high frequency characteristics of highly scaled graded AlGaN
channel polarization-doped field-effect transistors (PolFETs) that show constant current gain …
channel polarization-doped field-effect transistors (PolFETs) that show constant current gain …
[HTML][HTML] Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein… - Journal of Vacuum …, 2020 - pubs.aip.org
Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …