β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances
During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as
an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a …
an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a …
The Consequences of Random Sequential Adsorption for the Precursor Packing and Growth-Per-Cycle of Atomic Layer Deposition Processes
I Tezsevin, JH Deijkers, MJM Merkx… - The Journal of …, 2024 - ACS Publications
Atomic layer deposition (ALD) processes are known to deposit submonolayers of material
per cycle, primarily attributed to steric hindrance and a limited number of surface sites …
per cycle, primarily attributed to steric hindrance and a limited number of surface sites …
Bulk-like structural, magnetic and optical properties of (111)-and (001)-NiO thin films
Abstract We have grown (111)-and (001)-oriented NiO thin films on (0001)-Sapphire and
(001)-MgO substrates using pulsed laser deposition (PLD), respectively. DC magnetic …
(001)-MgO substrates using pulsed laser deposition (PLD), respectively. DC magnetic …