Epitaxial W–Mo multilayers are employed as a model system to demonstrate how resistivity
measurements parallel to metal–metal interfaces can be used to quantify the specific …

Epitaxial VNi 2 layers are deposited onto MgO (001) and their resistivity ρ measured as a
function of layer thickness d= 10.5–138 nm to quantify the resistivity size effect. The layers …

The resistivity size effect of thin films due to atomically rough surfaces is investigated using
first-principles quantum transport simulations with the disorder scattering treated by the …

Metastable face-centered cubic (fcc) Co layers are deposited by reactive magnetron
sputtering in 5 mTorr N 2 at 400 C followed by vacuum annealing at 500 C. The resulting …

In this study, we developed a Mo metal thin film deposition process consisting of two steps:
Mo2N thin film deposition using plasma-enhanced atomic layer deposition, followed by …

Thermal transport properties of metallic nanowires are crucial to the near-junction heat
dissipation of transistors. However, the understanding of the size-dependent thermal …

Vanadium oxycarbide (ie VC x O 1-x) solid solution was expected to be a novel and
promising ceramic materials in energy storage, catalysis and the preparation of metallic …

CuTi layers are co-sputter deposited on 20-nm SiO2/Si (001) wafers at 350° C to quantify
their stability in direct contact with a dielectric and to explore the potential of CuTi as barrier …

We present a methodology for numerically evaluating grain boundary scattering in
polycrystalline molybdenum (Mo) thin films. Two types of Mo films (an epitaxially grown …

Electron transport across Ru-TiN–Ru interfaces is quantified using multilayers containing
five 10-nm-thick Ru (0001) layers separated by TiN interlayers with nominal thicknesses …