High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction
Composed of a metal oxide (MO x) material-based emitter layer, p–n heterojunction
photodetectors (HPDs) challenge their homojunction counterparts for use in new generation …
photodetectors (HPDs) challenge their homojunction counterparts for use in new generation …
A route towards enhanced UV photo-response characteristics of SnO2/p-Si based heterostructures by hydrothermally grown nanorods
Integrating nanorods (NRs) into the structure of pn heterojunction-based devices proposes a
promising approach to overcome limited light absorption and charge transfer in …
promising approach to overcome limited light absorption and charge transfer in …
Engineering graphene quantum dots for enhanced ultraviolet and visible light p-Si nanowire-based photodetector
In this work, a significant improvement of the classical silicon nanowire (SiNW)-based
photodetector was achieved through the realization of core–shell structures using newly …
photodetector was achieved through the realization of core–shell structures using newly …
A self-powered dual-functional hybrid Cu2O/SiNWs heterojunction with applications in broadband photodetectors and ozone gas sensors
CY Huang, XR He, JJ Jhang, JH Wu, TH Wu… - Sensors and Actuators A …, 2022 - Elsevier
Dual-functional sensors can replace two or more individual sensors in a platform so they
decrease the system area. However, these devices have a major limitation in that they …
decrease the system area. However, these devices have a major limitation in that they …
Fast switching photodetector based on HfO2 thin film deposited using electron beam evaporation technique
This study reports the electrical properties of a fast-switching photodetector based on a
Hafnium Oxide (HfO2) thin film (TF) device with gold (Au) Schottky electrodes. It also …
Hafnium Oxide (HfO2) thin film (TF) device with gold (Au) Schottky electrodes. It also …
A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction
CY Huang, CP Huang, H Chen, SW Pai, PJ Wang… - Vacuum, 2020 - Elsevier
This study proposes a novel photodetector (PD) that uses an amorphous InGaZnO
(IGZO)/silicon nanowires (SiNWs) heterojunction, in which the IGZO functions as an …
(IGZO)/silicon nanowires (SiNWs) heterojunction, in which the IGZO functions as an …
Investigation of the effect of light on the electrical parameters of Si/TiO2 heterojunctions produced by anodic oxidation on p-type Si wafer
Fabrication of heterojunctions of Si combined with TiO2 oxide-based semiconductors is an
alternative method to produce cost effective photodiodes at last decade. In this study, to …
alternative method to produce cost effective photodiodes at last decade. In this study, to …
Fast-response ultraviolet photodetector based on Ta2O5 thin film
The deposition of a Ta2O5 thin film (TF) onto n-Si substrates was carried out using a
conventional electron beam evaporation method. The amorphous structural nature of the …
conventional electron beam evaporation method. The amorphous structural nature of the …
Low Dark Current and High Responsivity UV Detector Based on TiO2 Nanowire/RGO Thin Film Heterostructure
A UV detector was fabricated using glancing angle deposition (GLAD)-synthesized TiO 2
nanowires (NWs) over spin-coated reduced graphene oxide (RGO) thin films (TFs) on a Si …
nanowires (NWs) over spin-coated reduced graphene oxide (RGO) thin films (TFs) on a Si …
Ultraviolet photodiode fabricated from TiO2 nanorods/p-silicon heterojunction
In this paper, an ultraviolet (UV) photodiode in pn heterojunction configuration is fabricated
from TiO 2 nanorods hydrothermally deposited on p-type silicon substrate. Under UV …
from TiO 2 nanorods hydrothermally deposited on p-type silicon substrate. Under UV …