Driven by an ever‐expanding interest in new material systems with new functionality, the
growth of atomic‐scale electronic materials by molecular beam epitaxy (MBE) has evolved …

InAs (N) quantum dots (QDs) were grown on GaAs (001) by solid source molecular beam
epitaxy. Nitrogen was supplied by a radio-frequency plasma cell. The samples were …

Self-assembled GaInNAs/GaAs quantum dots (QDs) are promising structures for extending
the emission wavelength of GaInNAs/GaAs quantum wells from 1.3 to 1.55 μm and beyond …

Self-assembled Ga In N As∕ Ga As N single layer quantum-dot (QD) lasers grown using
solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature …

Structural and optical properties of GaInNAs/GaAs quantum structures grown by
metalorganic vapour phase epitaxy (MOVPE) are studied. The growth of arsenide–nitrides …

We present the results of GaInNAs∕ GaAs quantum dot structures with GaAsN barrier layers
grown by solid source molecular beam epitaxy. Extension of the emission wavelength of …

We propose a 1.3 μm high-density InAs quantum dot (QD) structure for optical devices that
uses an As2 source and a gradient composition strain reducing layer (GC-SRL). The …

Self-assembled GaIn (N) As quantum dots are fabricated on GaAs by atmospheric pressure
metalorganic vapor-phase epitaxy using dimethylhydrazine (DMHy) precursor as a nitrogen …

Low optical degradation in GaInAsN (Sb)/GaAs quantum dots (QDs) p–i–n structures
emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by …

An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates
by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting …