Measuring dielectric and electro-optic responses of thin films using plasmonic devices
This paper introduces a simple method for the measurement of the relative permittivity and
the Pockels coefficient of electro-optic (EO) materials in a waveguide up to sub-THz …
the Pockels coefficient of electro-optic (EO) materials in a waveguide up to sub-THz …
Integration Of Solution‐Processed BaTiO3 Thin Films with High Pockels Coefficient on Photonic Platforms
E Picavet, E Lievens, K De Geest… - Advanced Functional …, 2024 - Wiley Online Library
The heterogeneous integration of ferroelectric BaTiO3 thin films on silicon (Si) and silicon
nitride (SiN)‐based platforms for photonic integrated circuits (PICs) plays a crucial role in the …
nitride (SiN)‐based platforms for photonic integrated circuits (PICs) plays a crucial role in the …
Broadband polarization-independent edge couplers with high efficiency based on SiN-Si dual-stage structure
Y Jiang, Z Zhang, P Liu - IEEE Photonics Journal, 2024 - ieeexplore.ieee.org
Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive
index, low waveguide loss, broad operating bandwidth and compatibility with …
index, low waveguide loss, broad operating bandwidth and compatibility with …