Vertically-grown TFETs: an extensive analysis
AS Geege, TSA Samuel - Silicon, 2023 - Springer
TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …
electrical performance while also providing steeper switching ratio. This study encloses with …
Impact of interface trap charges on electrical performance characteristics of a source pocket engineered Ge/Si heterojunction vertical TFET with HfO2/Al2O3 laterally …
This work reports the impact of interface trap charges (ITCs) on the electrical performance
characteristics of a source pocket engineered (SPE) Ge/Si heterojunction (HJ) vertical TFET …
characteristics of a source pocket engineered (SPE) Ge/Si heterojunction (HJ) vertical TFET …
Device and circuit-level performance evaluation of DG-GNR-DMG vertical tunnel FET
This work presents the comparative study of Graphene Nanoribbon (GNR) based channel
Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel Field Effect Transistor (VTFET) …
Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel Field Effect Transistor (VTFET) …
Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications
Tunnel field effect transistors (TFETs) are known for lower power requirements than
MOSFETs due to their utilization of the band-to-band tunneling mechanism, along with low …
MOSFETs due to their utilization of the band-to-band tunneling mechanism, along with low …
Implementation and Performance Analysis of Vertical Stacked Double Gate TFET for Gas Sensing Applications
D Kanojia, M Verma, V Choudhary… - 2024 IEEE Third …, 2024 - ieeexplore.ieee.org
This research constructs an ammonia gas sensor using a vertically stacked dual-gate tunnel
field-effect transistor (VSDGTFET) and assesses its sensitivity at ambient room temperature …
field-effect transistor (VSDGTFET) and assesses its sensitivity at ambient room temperature …
Lateral and vertical gate oxide stacking impact on noise margins and delays for the 8T SRAM designed with source pocket engineered GaSb/Si heterojunction vertical …
MR Tripathy, S Jit - IEEE Transactions on Device and Materials …, 2021 - ieeexplore.ieee.org
This work investigates the impact of gate-oxide stacking on the performance of source-
pocket engineered (SPE) GaSb/Si heterojunction (HJ) vertical TFETs (VTFETs) based 8T …
pocket engineered (SPE) GaSb/Si heterojunction (HJ) vertical TFETs (VTFETs) based 8T …
Device and Circuit-Level Performance Evaluation of DG-GNR-DMG Vertical Tunnel FET
This work presents the comparative study of Graphene Nanoribbon (GNR) based channel
Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel FET performance with all …
Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel FET performance with all …
TCAD assessment based device to circuit-level performance comparison study of source pocket engineered all-Si vertical tunnel FET and GaSb/Si heterojunction …
In this work device to circuit-level performance comparison is made between GaSb/Si
heterojunction vertical tunnel FET and all-Si vertical tunnel FET. A thin layer of heavily …
heterojunction vertical tunnel FET and all-Si vertical tunnel FET. A thin layer of heavily …