Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …

Ga2O3 is an ultrawide-band-gap semiconductor with excellent physical properties and
promising applications in electronics and photoelectronics. Atomic layer deposition (ALD) is …

The realization of the free interface strain between a Ga 2 O 3 material and a substrate is
significantly critical to fulfill the requirements for the fabrication of high-quality Ga 2 O 3 …

Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer
deposition using O2 plasma as reactant and trimethylgallium as a gallium source. The …

To develop an efficient catalyst/process for the production of 5-hydroxymethylfurfural (HMF),
bifunctional phosphated gallia (GaP) catalysts were prepared by solid-state grinding, an eco …

Abstract β-Ga 2 O 3 films have been prepared on sapphire (0001) substrate using an RF
magnetron sputtering. The highly oriented β-Ga 2 O 3 films with a high crystallinity could be …

The evolution of the structural and chemical properties of non-stoichiometric amorphous Ga
2 O 3-x thin films during post-annealing in an atmospheric environment was investigated …

Photodetectors play a crucial role in converting light signals into electrical signals and have
significant applications in various fields such as communications, imaging, and sensing …

Oxidation of 2D layered materials has proven advantageous in creating oxide/2D material
heterostructures, opening the door for a new paradigm of low‐power electronic devices …

Plasma enhanced atomic layer deposition (PEALD) is a cyclic atomic layer deposition
process that incorporates plasma-generated species into one of the cycle substeps. The …