A 60-GHz SiGe power amplifier with three-conductor transmission-line-based Wilkinson baluns and asymmetric directional couplers
Y Gong, JD Cressler - IEEE Transactions on Microwave Theory …, 2020 - ieeexplore.ieee.org
A compact, 60-GHz high-power, wideband balanced power amplifier, implemented in a 90-
nm SiGe BiCMOS technology, is demonstrated. A three-conductor transmission-line-based …
nm SiGe BiCMOS technology, is demonstrated. A three-conductor transmission-line-based …
A Performance Study of Layout in 0.13 um CMOS Power Amplifier for 4G Mobile Front-End Module
S He, L Xu, H Meng - 2024 IEEE International Symposium on …, 2024 - ieeexplore.ieee.org
This work presents the performance improvements of optimized layout in 0.13 um CMOS
Power Amplifier (PA) for 4G multimode multiband transmitter frond-end module (TXM). The …
Power Amplifier (PA) for 4G multimode multiband transmitter frond-end module (TXM). The …
[PDF][PDF] RADIO FREQUENCY AND MILLIMETER WAVE CIRCUIT COMPONENT DESIGN WITH SIGE BICMOS TECHNOLOGY
Y Gong - 2020 - core.ac.uk
RADIO FREQUENCY AND MILLIMETER WAVE CIRCUIT COMPONENT DESIGN WITH SIGE
BICMOS TECHNOLOGY COPYRIGHT © 2020 BY YUNYI GONG Page 1 RADIO FREQUENCY …
BICMOS TECHNOLOGY COPYRIGHT © 2020 BY YUNYI GONG Page 1 RADIO FREQUENCY …