Nonlinear, voltage-dependent capacitances of power semiconductor devices are capable of
having significant impact on the operation of switched-mode power converters. Particularly …

In this paper, a novel isolated dc-dc converter topology for medium-voltage (MV)
applications is proposed by combining the advantages of resonant converters and dual …

This article presents a novel method for the dynamic measurement of–characteristic of SiC
MOSFET power modules based on the process of charging the output capacitance of the …

The characterization of voltage-dependent capacitances of power semiconductor devices
[diode, MOSFET, insulated gate bipolar transistor (IGBT), etc.] is very important for modeling …

The existence of parasitic capacitances surrounding switching devices has been well
established in the field. These capacitances are capable of having significant impact on the …

The voltage dependent parasitic capacitances in high voltage semiconductor power devices
such as MOSFET, JFET and IGBT play a vital role in the understanding and modeling of the …

This work investigates the power GaN-HEMTs switching behaviour differences resulted from
usage of two gate driving configurations: single and split outputs. The analysis based on …

Abstract In 2010, more than 2% of all electricity generated in the United States was used to
power data centers. Estimates indicate that as many as 85% of data centers constructed …

Newly developed 15 kV silicon carbide (SiC) power MOSFETs with fast switching capability
enable the reduction of size, weight and complexity of medium voltage power converters. In …

After three years' work on this dissertation, it is the time to express my sincere gratitudes to
all the people who helped me, who worked together with me, who guided me, who always …