Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …

Recent results on GaAs-based high-speed mode-locked quantum-dot (QD) lasers and
optical amplifiers with an operation wavelength centered at 1290 nm are reviewed and their …

An optically pumped semiconductor disk laser using submonolayer quantum dots (SML
QDs) as gain medium is demonstrated. High-power operation is achieved with stacked In …

We have studied the electronic states of closely stacked InAs/GaAs quantum dots (QDs) with
a 4.0-nm spacer layer using linearly polarized photoluminescence (PL) and time-resolved …

Using cross-sectional scanning tunneling microscopy and photoluminescence
spectroscopy, the atomic structure and optical properties of submonolayer depositions of …

Recent experimental measurements, without any theoretical guidance, showed that isotropic
polarization response can be achieved by increasing the number of quantum-dot (QD) …

A polarization-insensitive quantum dot semiconductor optical amplifiers (QD-SOAs) have
been studied for use in future optical communication systems. A part of our work shows that …

We have theoretically studied the optical polarization in columnar InAs/GaAs quantum dots
(QDs), in which the self-assembled QDs are vertically stacked with no interdot spacing. The …

We investigated the effects of the GaAs capping temperature on the morphological and
photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs (001). The …

We present eight-band k⋅ p calculations of the electronic and polarization properties of
columnar In z Ga 1− z As quantum dots (CQD) with high aspect ratio embedded in an In x …