Solution processed metal oxide high‐κ dielectrics for emerging transistors and circuits

A Liu, H Zhu, H Sun, Y Xu, YY Noh - Advanced Materials, 2018 - Wiley Online Library
The electronic functionalities of metal oxides comprise conductors, semiconductors, and
insulators. Metal oxides have attracted great interest for construction of large‐area …

Sol-gel metal oxide dielectrics for all-solution-processed electronics

S Park, CH Kim, WJ Lee, S Sung, MH Yoon - Materials Science and …, 2017 - Elsevier
Metal oxide (MOx) dielectric materials are considered to be a key element for diverse thin-
film electronic systems owing to their superior electrical and mechanical properties. While …

Low‐temperature, nontoxic water‐induced metal‐oxide thin films and their application in thin‐film transistors

G Liu, A Liu, H Zhu, B Shin, E Fortunato… - Advanced Functional …, 2015 - Wiley Online Library
Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication
of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) …

All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

SY Joung, H Yim, D Lee, J Shim, SY Yoo, YH Kim… - ACS …, 2024 - ACS Publications
Assembling solution-processed van der Waals (vdW) materials into thin films holds great
promise for constructing large-scale, high-performance thin-film electronics, especially at …

Water‐induced scandium oxide dielectric for low‐operating voltage n‐and p‐type metal‐oxide thin‐film transistors

A Liu, G Liu, H Zhu, H Song, B Shin… - Advanced Functional …, 2015 - Wiley Online Library
Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials
have been extensively studied for use in low‐cost and high‐performance thin‐film …

Spray‐pyrolyzed high‐k zirconium‐aluminum‐oxide dielectric for high performance metal‐oxide thin‐film transistors for low power displays

MM Islam, JK Saha, MM Hasan, J Kim… - Advanced Materials …, 2021 - Wiley Online Library
A high‐k, zirconium‐aluminum‐oxide (ZAO) gate insulator (GI) using low‐cost spray
pyrolysis technique for large area and low power electronics is demonstrated. The high …

Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

C Zhu, A Liu, G Liu, G Jiang, Y Meng… - Journal of Materials …, 2016 - pubs.rsc.org
The fabrication of water-induced amorphous high-k zirconium oxide (ZrOx) dielectrics has
been proposed with the objective of achieving high performance and reducing costs for next …

Nontoxic, eco‐friendly fully water‐induced ternary Zr–Gd–O dielectric for high‐performance transistors and unipolar inverters

L Zhu, G He, W Li, B Yang, E Fortunato… - Advanced Electronic …, 2018 - Wiley Online Library
In this context, a simple, nontoxic, and eco‐friendly fully water‐induced (WI) route to
fabricate ternary ZrGdOx thin films at various annealing temperatures is reported. Annealing …

Solution-processed high-k HfO 2 gate dielectric processed under softening temperature of polymer substrates

YB Yoo, JH Park, KH Lee, HW Lee, KM Song… - Journal of Materials …, 2013 - pubs.rsc.org
A low-temperature, solution-processed high-k HfO2 gate dielectric was demonstrated. To
decompose a hafnium precursor at a temperature lower than 200° C, an aqueous solution of …

Redox chloride elimination reaction: facile solution route for indium‐free, low‐voltage, and high‐performance transistors

A Liu, Z Guo, G Liu, C Zhu, H Zhu… - Advanced Electronic …, 2017 - Wiley Online Library
Solution‐processed oxide semiconductor and dielectric thin films have been widely studied
for achieving flexible, high‐performance, and low‐power electronics and circuits. In this …