Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
Q Zhang - US Patent 8,415,671, 2013 - Google Patents
3,439,189 A 4/1969 Petry 3,629,011 A 12/1971 Tohiet a1. 3,924,024 A 12/1975 Naber et a1.
4,160,920 A 7/1979 Courier de Mere 4,242,690 A 12/1980 Temple source/drain regions that …
4,160,920 A 7/1979 Courier de Mere 4,242,690 A 12/1980 Temple source/drain regions that …
Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
SH Ryu, AK Agarwal - US Patent 8,901,699, 2014 - Google Patents
US 2006/0255423 A1 Nov. 16, 2006 (57) ABSTRACT (51) Int. Cl. H011, 29/47(200601)
Integral structures that block the current conduction of the H01L 29/8 72(200601) built-in PiN …
Integral structures that block the current conduction of the H01L 29/8 72(200601) built-in PiN …
High performance power module
MK Das, RJ Callanan, H Lin, JW Palmour - US Patent 9,640,617, 2017 - Google Patents
Int. Cl. The present disclosure relates to a power module that has a HOIL 29/6(2006.01)
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
Multiple floating guard ring edge termination for silicon carbide devices
SH Ryu, AK Agarwal - US Patent 7,026,650, 2006 - Google Patents
Edge termination for silicon carbide devices has a plurality of concentric floating guard rings
in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide based …
in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide based …
High power insulated gate bipolar transistors
(56) References Cited 6,104,043 A 8/2000 Hermansson et al. 6,107,142 A 8, 2000 Suvorov
et al. US PATENT DOCUMENTS 6,117,735 A 9, 2000 Ueno 6,121,633 A 9/2000 Singh et al …
et al. US PATENT DOCUMENTS 6,117,735 A 9, 2000 Ueno 6,121,633 A 9/2000 Singh et al …
Semiconductor devices with heterojunction barrier regions and methods of fabricating same
Q Zhang - US Patent 9,117,739, 2015 - Google Patents
4,945,394 4.946, 547 5,011,549 5,017,976 5,028,977 5,032,888 5,041,881 5,111,253
5,155.289 5,166,760 5,170,231 5,170,455 5,184,199 5, 192,987 5,200,022 5,210,051 …
5,155.289 5,166,760 5,170,231 5,170,455 5,184,199 5, 192,987 5,200,022 5,210,051 …
Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
R Singh - US Patent 6,673,662, 2004 - Google Patents
Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon
carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a …
carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a …
Methods of forming semiconductor devices including epitaxial layers and related structures
BA Hull, Q Zhang - US Patent 8,288,220, 2012 - Google Patents
(57) ABSTRACT A method of forming a semiconductor device may include forming a
terminal region of a first conductivity type within a semiconductor layer of the first conductivity …
terminal region of a first conductivity type within a semiconductor layer of the first conductivity …
Design and characterization of newly developed 10 kV 2 A SiC pin diode for soft-switching industrial power supply
M Bakowski, P Ranstad, JK Lim… - … on Electron Devices, 2014 - ieeexplore.ieee.org
10 kV, 2 A SiC pin diodes have been designed and fabricated. The devices feature excellent
stability of forward characteristics and robust junction termination with avalanche capability …
stability of forward characteristics and robust junction termination with avalanche capability …