The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the
most promising transistor technologies for future large-area flexible electronics. This work …

High-performance p-type oxide thin film transistors (TFTs) have great potential for many
semiconductor applications. However, these devices typically suffer from low hole mobility …

The absence of a high-performance p-channel oxide thin-film transistor (TFT) is the major
challenge faced in the current oxide semiconductor device technology. Simple solution …

An extremely sensitive dependence of the electronic properties of SnOx film on sputtering
deposition power is discovered experimentally. The carrier transport sharply switches from n …

Unlike most metal oxides, copper oxides (Cu2O and CuO) show p-type conductivity, which is
required for many electronic applications. Cu2O has been reported to have relatively high …

This paper reports a new p-type tin oxyselenide (SnSeO), which was designed with the
concept that the valence band edge from O 2p orbitals in the majority of metal oxides …

High conductivity in the off-state and low field-effect mobility compared to bulk properties is
widely observed in the p-type thin-film transistors of Cu 2 O, especially when processed at …

The development of well‐performing p‐type semiconductors is essential in pushing
transparent electronics to the next frontier. Copper oxide (CuxO) is a potentially attractive …

Switching characteristics of copper oxide (Cu2O) thin-film transistors (TFTs) were enhanced
by buffering both sides of the channel with a thin layer of sputtered molybdenum trioxide …