Light-stimulated artificial photonic synapses based on solution-processed In-Sn-Zn-O transistors for neuromorphic applications
Artificial photonic synapse devices (PSDs) hold great promise for the realization of next-
generation artificial vision systems and processing units through a synergistic combination …
generation artificial vision systems and processing units through a synergistic combination …
Evaluation of positive-bias-stress-induced degradation in InSnZnO thin-film transistors by low frequency noise measurement
In this letter, degradation of InSnZnO thin-film transistors (TFTs) under positive bias stress
(PBS) is evaluated by low frequency noise (LFN) measurement for the first time. With PBS …
(PBS) is evaluated by low frequency noise (LFN) measurement for the first time. With PBS …
Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators
CC Wang, AY Lo, MC Cheng, YS Chang, HC Shih… - Scientific Reports, 2024 - nature.com
Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using
a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor …
a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor …
Low-frequency noise in hybrid-phase-microstructure ITO-stabilized ZnO thin-film transistors
Low-frequency noise (LFN) in hybrid-phase-microstructure ITO-stabilized ZnO thin-film
transistors is investigated. The measured drain current noise power spectral densities obey …
transistors is investigated. The measured drain current noise power spectral densities obey …
InSnZnO thin-film transistors with nitrogenous self-assembled multilayers passivation
Nitrogenous octadecylamine (ODA) self-assembled multilayers (SAMs) are prepared as
passivation layers by the vapor-phase process for amorphous InSnZnO (ITZO) thin-film …
passivation layers by the vapor-phase process for amorphous InSnZnO (ITZO) thin-film …
Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances
Nitrogen-doped indium tin zinc oxide (ITZO: N) thin film transistors (TFTs) were deposited on
SiO 2 (200 nm)/p-Si< 1 0 0> substrates by RF magnetron sputtering at room temperature …
SiO 2 (200 nm)/p-Si< 1 0 0> substrates by RF magnetron sputtering at room temperature …
Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering
In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel
displays due to their high carrier concentration and high mobility. In the current work, ITZO …
displays due to their high carrier concentration and high mobility. In the current work, ITZO …
Impact of photo-excitation on leakage current and negative bias instability in InSnZnO thickness-varied thin-film transistors
D Wang, M Furuta, S Tomai, K Yano - Nanomaterials, 2020 - mdpi.com
InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the
benefits of potential applications in the next generation of super-high-definition flat-panel …
benefits of potential applications in the next generation of super-high-definition flat-panel …
Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise
YY Chen, Y Liu, L Wang, B Li… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
The long-term reliability of InZnO (IZO) thin film transistors (TFTs) under a hydrogen-
containing environment is researched. Hydrogen incorporation induces hydroxyl groups and …
containing environment is researched. Hydrogen incorporation induces hydroxyl groups and …
Long-Term Recovery Behavior in InSnZnO Thin-Film Transistors after Negative Bias Stress
In this work, long-term recovery behavior in InSnZnO thin-film transistors (TFTs) after
negative bias stress (NBS) is systematically investigated for the first time. The on-state …
negative bias stress (NBS) is systematically investigated for the first time. The on-state …