Abstract 4H-SiC has excellent physical and chemical properties such as wide band gap and
high electron mobility and can be used in microwave and radio frequency devices. Epitaxial …

In this study, for high-efficiency experiments of deep X-ray lithography, radiation mutation
breeding, and X-ray topography, we expanded the beam width in the exposure and crystal …

The effect of carbon coating on a surface structure of a high-dose implanted/annealed
silicon carbide (SiC) during annealing was examined using scanning probe microscopy …

In order to solve the problem of multislice spiral CT and three‐dimensional image
reconstruction technology in the observation of ankle sports injuries under the microscope …

To address surface morphological defects that have a destructive effect on the epitaxial
wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key …

Abstract A kinetic Monte Carlo (kMC) simulation with a cluster-multiple labeling technique
was carried out to study the dynamic behavior of Si-C clusters during the early stage of …

Semiconductor materials exemplifies humanity's unwavering pursuit of enhanced
performance, efficiency, and functionality in electronic devices. From its early iterations to the …

Synchrotron X-ray topography was employed to characterize the defect structure and
investigate the defect generation process in Czochralski (CZ)-grown ScAlMgO 4 (SAM) …