Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
Recent advances in III-Sb nanowires: from synthesis to applications
The excellent properties of III–V semiconductors make them intriguing candidates for next-
generation electronics and optoelectronics. Their nanowire (NW) counterparts further …
generation electronics and optoelectronics. Their nanowire (NW) counterparts further …
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
In-memory computing can be used to overcome the von Neumann bottleneck—the need to
shuffle data between separate memory and computational units—and help improve …
shuffle data between separate memory and computational units—and help improve …
Improved electrostatics through digital etch schemes in vertical GaSb nanowire p-MOSFETs on Si
Sb-based semiconductors are critical p-channel materials for III–V complementary metal
oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide …
oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide …
Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer
YF Jiang, JM Tian, T Li, S Li, BJ Wang… - ACS Applied Materials …, 2024 - ACS Publications
Nanowire (NW) field-effect transistors (FETs) have great potential in next-generation
integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent …
integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent …
Compressively-strained GaSb nanowires with core-shell heterostructures
GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type
transistors, however they require the introduction of compressive strain to enhance the …
transistors, however they require the introduction of compressive strain to enhance the …
Selective-Area Growth of Vertical InGaAs/GaSb Core–Shell Nanowires on Silicon and Dual Switching Properties
H Gamo, C Lian, J Motohisa, K Tomioka - ACS nano, 2023 - ACS Publications
The epitaxy of the Sb-related quantum well structure has been extensively investigated.
However, the GaSb facet growth in selective-area growth (SAG) and GaSb nanostructures …
However, the GaSb facet growth in selective-area growth (SAG) and GaSb nanostructures …
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Thin vertical nanowires based on III–V compound semiconductors are viable candidates as
channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to …
channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to …
Atmospheric neutron radiation response of III–V binary compound semiconductors
JL Autran, D Munteanu - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
This article is a first attempt to explore, by simulation, the radiation response of III-V binary
compound semiconductors subjected to high-energy atmospheric neutrons. The study …
compound semiconductors subjected to high-energy atmospheric neutrons. The study …