Herein, the scope is to provide an overview on the current status of AlN/sapphire templates
for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the …

Al x Sc1–x N is a nitride-ferroelectric compatible with both CMOS and GaN technology. The
origin of ferroelectricity in these ternary nitrides relies on the full inversion of nitrogen atom …

A series of GaN films were grown by metalorganic vapor phase epitaxy on nitrided sapphire
using an initial annealed low-temperature nucleation layer (LT-NL), without employing any …

The heteroepitaxial growth and phase formation of Ga 2 O 3 on Al-polar AlN (0001)
templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches …

We report the molecular beam epitaxy growth and characterization of aluminum gallium
nitride (AlGaN) epilayer on an Si substrate. The AlGaN epilayer was grown on an AlN buffer …

We have investigated the optimization of Al0. 2Ga0. 8N layers directly grown on sapphire by
metalorganic vapor phase epitaxy (MOVPE). The quality of the AlGaN epilayers was …

We report a detailed structural and chemical characterisation of aluminium silicon
manganese nitrides that act as grain growth inhibitors in industrially processed grain …

Epitaxial heterostructures composed of complex correlated metal oxides, grown along
specific crystallographic orientations, offer a route to investigating emergent phenomena …

Deposition of epitaxial oxide semiconductor films using physical vapor deposition methods
requires a detailed understanding of the role of energetic particles to control and optimize …

The epitaxial growth of Mg 3 N 2 thin films by molecular beam epitaxy has been recently
achieved. This work presents the structural properties of the films, including grain sizes and …