Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices

JJ Bean, M Saito, S Fukami, H Sato, S Ikeda, H Ohno… - Scientific reports, 2017 - nature.com
Polycrystalline metal oxides find diverse applications in areas such as nanoelectronics,
photovoltaics and catalysis. Although grain boundary defects are ubiquitous their structure …

Experimental demonstration of four-terminal magnetic logic device with separate read-and write-paths

DM Bromberg, MT Moneck, VM Sokalski… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
Magnetic logic has recently become an attractive candidate for future electronics. This paper
describes the demonstration of a four-terminal spintronic device with distinct read-and write …

[HTML][HTML] Effect of annealing conditions on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO multilayers

Y Liu, L Hao, J Cao - AIP Advances, 2016 - pubs.aip.org
Films with a structure of Ta (5 nm)/Co 20 Fe 60 B 20 (0.8–1.5 nm)/MgO (1 nm)/Ta (1 nm)
were deposited on Corning glass substrates by magnetron sputtering. The as-deposited …

Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

L Cuchet, B Rodmacq, S Auffret, RC Sousa… - Applied Physics …, 2014 - pubs.aip.org
The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular
anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic …

Comparative analysis of MTJ/CMOS hybrid cells based on TAS and in-plane STT magnetic tunnel junctions

B Jovanović, RM Brum, L Torres - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
In the last few years, spintronics has attracted the full attention of the scientific community for
the synergy it provides to conventional complimentary metal-oxide-semiconductor (CMOS) …

Intelligent electromagnetic sensors for non-invasive trojan detection

E Chen, J Kan, BY Yang, J Zhu, V Chen - Sensors, 2021 - mdpi.com
Rapid growth of sensors and the Internet of Things is transforming society, the economy and
the quality of life. Many devices at the extreme edge collect and transmit sensitive …

Thickness and interface-dependent crystallization of CoFeB alloy thin films

JP Pellegren, VM Sokalski - IEEE Transactions on Magnetics, 2015 - ieeexplore.ieee.org
We have analyzed the crystallization processes of sputtered thin films of Co 20 Fe 60 B 20
and Co 20 Fe 60 B 20-X alloys (X= Ta, Hf) using the increase in saturation magnetization …

Buffer influence on magnetic dead layer, critical current, and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

M Frankowski, A Żywczak, M Czapkiewicz… - Journal of Applied …, 2015 - pubs.aip.org
We present a detailed study of Ta/Ru-based buffers and their influence on features crucial
from the point of view of applications of Magnetic Tunnel Junctions (MTJs) such as critical …

Thermally robust synthetic antiferromagnetic fixed layers containing FeCoB for use in STT-MRAM devices

T McKinnon, B Heinrich, E Girt - Journal of Magnetism and Magnetic …, 2022 - Elsevier
In this work we measure the bilinear and biquadratic interlayer exchange coupling, J 1 and J
2, for several different synthetic antiferromagnetic structures containing FeCoB both before …

[PDF][PDF] Current-Driven Magnetic Devices for Non-Volatile Logic and Memory.

DM Bromberg - 2014 - pstorage-cmu-348901238291901.s3 …
Magnetic logic has entered the spotlight as an intriguing candidate for future electronic
systems. Recently we proposed a magnetic logic technology (“mLogic”) based on a …