Comprehensive TCAD Simulation Study of High Voltage (> 650V) Common Drain Bidirectional AlGaN/GaN HEMTs
MT Alam, C Gupta - arXiv preprint arXiv:2304.04648, 2023 - arxiv.org
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT
was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices …
was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices …