Gate isolation for multigate device
SN Ju, KC Chiang, KT Pan, ZC Lin, CH Wang… - US Patent …, 2023 - Google Patents
2021-02-08 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
Methods of reducing capacitance in field-effect transistors
CH Chen, CM Lee, FK Yang, MY Wang - US Patent 12,057,488, 2024 - Google Patents
A semiconductor structure includes a fin protruding from a substrate, a first and a second
metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each …
metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each …
Methods of reducing capacitance in field-effect transistors
CH Chen, CM Lee, FK Yang, MY Wang - US Patent 11,374,104, 2022 - Google Patents
A semiconductor structure includes a fin protruding from a substrate, a first and a second
metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each …
metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each …
Channel conduction in semiconductor devices
John A. Smythe, III, Boise, ID (US) An example apparatus includes a first source/drain region
and a second source/drain region formed in a substrate to form an active area of the …
and a second source/drain region formed in a substrate to form an active area of the …
Channel conduction in semiconductor devices
An example apparatus includes a first source/drain region and a second source/drain region
formed in a substrate to form an active area of the apparatus. The first source/drain region …
formed in a substrate to form an active area of the apparatus. The first source/drain region …
Footing removal in cut-metal process
MC Huang, KB Huang, YL Chuang… - US Patent 11,854,903, 2023 - Google Patents
(57) ABSTRACT A method includes forming a gate stack, which includes a first portion over
a portion of a first semiconductor fin, a second portion over a portion of a second …
a portion of a first semiconductor fin, a second portion over a portion of a second …
Channel conduction in semiconductor devices
An example apparatus includes a first source/drain region and a second source/drain region
formed in a substrate to form an active area of the apparatus. The first source/drain region …
formed in a substrate to form an active area of the apparatus. The first source/drain region …