To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

The degradations of electrical parameters for double-trench silicon carbide (SiC) power
metal-oxidesemiconductor field-effect transistors (MOSFETs) under repetitive avalanche …

In this article, a novel SiC trench MOSFET with deep p+ shielded regions and current
spreading layers (CSLs)(DPCSL-MOS) is proposed and studied by TCAD simulations. The …

In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …

The degradations of electrical parameters for silicon carbide power MOSFETs under
repetitive short-circuit (SC) stress are investigated in detail in this paper. It demonstrates that …

The short-circuit (SC) failure mechanism of double-trench silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors (MOSFETs) is comprehensively studied and …

This paper presents the impact of a short-circuit event on the gate reliability in planar SiC
MOSFETs, which becomes more critical with increased junction temperature and higher bias …

The preliminary characterization study and analysis of the short-circuit (SC) capability of SiC
MOSFET have been reported in recent years. However, the failure modes of the SiC …

In this study, the experimental evaluation and numerical analysis of short-circuit
mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus …

In this paper, the authors report a unique short circuit failure mechanism of a 1.2 kV silicon
carbide (SiC) SBD-wall-integrated trench MOSFET (SWITCH-MOS), using numerical …