The Si incorporation into GaAs layers grown by molecular beam epitaxy on GaAs (631) A substrates as a function of the growth temperature was studied. Atomic force microscopy …
A suite of characterization techniques including electron beam induced current and cross- sectional transmission electron microscopy in cooperation with current voltage and external …
R Contreras-Guerrero, A Guillen-Cervantes… - Journal of crystal …, 2009 - Elsevier
AlGaAs/GaAs quantum wells (QWs) structures were grown by molecular beam epitaxy (MBE) on semi-insulating-and Si-doped GaAs (100) substrates subjected to different surface …
Titanium dioxide (TiO 2) has attracted great attention because of its high chemical stability, environmental friendliness, easy availability, and cost effectiveness. One of the potential …
E Eugenio López - 2018 - repositorioinstitucional.uaslp.mx
Esta obra se encuentra bajo el resguardo de la Universidad Autónoma de San Luis Potosí (UASLP) y ha sido depositada en formato digital en el Repositorio Institucional NINIVE …