G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY
MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS …

(57) ABSTRACT A thin-film memory element made by the technique of forming thin film and
functioning as a thin-film transis tor. The memory element has two gate-insulating films, and …

A thin film-transistor structure and methods of manu facture provide high ON/OFF current
ratio and signifi cantly reduce OFF state leakage currents. A doped thin film disposed on an …

According to a transparent conductive? lm forming method. after an 1T0 (Indium Tin Oxide)
thin? lm is formed at room temperature by a sputtering method, an annealing treatment is …

Methods of forming thin film transistors and related systems are described. In one
embodiment, a method forms Source/drain material over a Substrate using a low …

57) ABSTRACT A process for manufacturing a semiconductor device con prises forming an
SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary …

57 ABSTRACT A semiconductor device having a double-side wiring structure, in which a
single crystal semiconductor thin film is formed integrally with transistor elements and is …

Herein disclosed are a semiconductor device having a double-side wiring structure, in which
a single crystal semi conductor thin film formed integrally with transistor ele ments is …

(57) ABSTRACT A method of manufacturing a gate-insulated thin film tran sistor is disclosed.
One improvement is that the thin film transistor is formed on a Substrate with a blocking layer …

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film
transistor is formed on a substrate through a blocking layer in between so that it is possible …