Neuromorphic devices based on fluorite‐structured ferroelectrics
A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …
that may not curtail in the foreseeable future. The required data processing speed and …
Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry
Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …
Enhancing chemisorption efficiency and thin-film characteristics via a discrete feeding method in high-k dielectric atomic layer deposition for preventing interfacial …
Interfacial layer formation between electrodes and insulators is a well-known issue in metal–
insulator–metal capacitors and can severely limit their electrical properties. In this study, we …
insulator–metal capacitors and can severely limit their electrical properties. In this study, we …
Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
In this work, the impact of a tungsten oxide (WO3) seed and capping layer for ferroelectric La-
doped (Hf, Zr) O2 (La: HZO) based capacitors, designed with back-end-of-line (BEOL) …
doped (Hf, Zr) O2 (La: HZO) based capacitors, designed with back-end-of-line (BEOL) …
Phase-controlled molybdenum dioxide electrodes by RF reactive magnetron sputtering for achieving high-k rutile TiO2 dielectric
Molybdenum dioxide (MoO 2) has recently garnered attention as a promising oxide
electrode for next-generation dynamic random-access memory capacitors owing to its high …
electrode for next-generation dynamic random-access memory capacitors owing to its high …
Alternative surface reaction route in the atomic layer deposition of NbN thin films for reduced resistivity
HJ Lee, SY Jang, HM Lee, JY Sung, SE Kim… - Journal of Alloys and …, 2023 - Elsevier
Transition metal nitride thin films such as TiN are necessary as conducting electrodes in
memory and transistor devices. Due to their high work function (> 4.7 eV), NbN thin films …
memory and transistor devices. Due to their high work function (> 4.7 eV), NbN thin films …
[HTML][HTML] Novel halogenated cyclopentadienyl hafnium precursor for atomic layer deposition of high-performance HfO 2 thin film
High dielectric constant (high-k) materials play a crucial role in modern electronics,
particularly in semiconductor applications such as transistor gate insulators and dielectrics …
particularly in semiconductor applications such as transistor gate insulators and dielectrics …
In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications
C Hwang, YW Kim, J Park, MH Kim, JS Kim… - Journal of Alloys and …, 2024 - Elsevier
This study investigates the viability of TiO 2 as a high-k material in metal-insulator-metal
(MIM) capacitors, essential components influencing semiconductor memory device …
(MIM) capacitors, essential components influencing semiconductor memory device …
Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt (CO) 2
A Rothman, S Seo, J Woodruff, H Kim… - Journal of Vacuum …, 2024 - pubs.aip.org
Miniaturization of microelectronic devices necessitates atomic precision in manufacturing
techniques, particularly in the deposition of thin films. Atomic layer deposition (ALD) is …
techniques, particularly in the deposition of thin films. Atomic layer deposition (ALD) is …
Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer
The physicochemical and electrical properties of Pt/Al-doped TiO2 (ATO)/Ru/TiN capacitors
were investigated by adopting an atomic-layer-deposited Ru interlayer between the ATO …
were investigated by adopting an atomic-layer-deposited Ru interlayer between the ATO …