Perovskite oxides as transparent semiconductors: a review
H He, Z Yang, Y Xu, AT Smith, G Yang, L Sun - Nano Convergence, 2020 - Springer
Traditional transparent conducting oxides (TCOs) have been widely used for various
optoelectronic applications, but have the trade-off between conductivity and transmittance …
optoelectronic applications, but have the trade-off between conductivity and transmittance …
Transparent perovskite barium stannate with high electron mobility and thermal stability
WJ Lee, HJ Kim, J Kang, DH Jang… - Annual Review of …, 2017 - annualreviews.org
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have
become necessary materials for a variety of applications in the information and energy …
become necessary materials for a variety of applications in the information and energy …
Microscopic origin of the Drude-Smith model
The Drude-Smith model has been used extensively in fitting the THz conductivities of
nanomaterials with carrier confinement on the mesoscopic scale. Here, we show that the …
nanomaterials with carrier confinement on the mesoscopic scale. Here, we show that the …
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
Y Sun, SE Thompson, T Nishida - Journal of Applied Physics, 2007 - pubs.aip.org
A detailed theoretical picture is given for the physics of strain effects in bulk semiconductors
and surface Si, Ge, and III–V channel metal-oxide-semiconductor field-effect transistors. For …
and surface Si, Ge, and III–V channel metal-oxide-semiconductor field-effect transistors. For …
Optically controlled dielectric metasurfaces for dynamic dual-mode modulation on terahertz waves
H Zhou, S Zhang, S Wang, Y Yao, Q Cai… - Advanced …, 2023 - spiedigitallibrary.org
Dynamically controlling terahertz (THz) waves with an ultracompact device is highly desired,
but previously realized tunable devices are bulky in size and/or exhibit limited light-tuning …
but previously realized tunable devices are bulky in size and/or exhibit limited light-tuning …
Femtosecond pump-probe reflectivity study of silicon carrier dynamics
We have studied the ultrafast optical response of native-oxide terminated Si (001) with pump-
probe reflectivity using 800 nm, 28 fs pulses at an excitation density of (5.5±0. 3)× 10 18 cm …
probe reflectivity using 800 nm, 28 fs pulses at an excitation density of (5.5±0. 3)× 10 18 cm …
Near-infrared free carrier absorption in heavily doped silicon
Free carrier absorption in heavily doped silicon can have a significant impact on devices
operating in the infrared. In the near infrared, the free carrier absorption process can …
operating in the infrared. In the near infrared, the free carrier absorption process can …
All-electronic terahertz nanoscopy
Probing conductivity in a contactless way with nanoscale resolution is a pressing demand in
such active fields as quantum materials, superconductivity, and molecular electronics. Here …
such active fields as quantum materials, superconductivity, and molecular electronics. Here …
Infrared radiative properties of heavily doped silicon at room temperature
This paper describes an experimental investigation on the infrared radiative properties of
heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with …
heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with …
Impact of nonparabolic electronic band structure on the optical and transport properties of photovoltaic materials
The effective mass approximation (EMA) models the response to an external perturbation of
an electron in a periodic potential as the response of a free electron with a renormalized …
an electron in a periodic potential as the response of a free electron with a renormalized …