Conductive bridge random access memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications
Due to a rapid increase in the amount of data, there is a huge demand for the development
of new memory technologies as well as emerging computing systems for high-density …
of new memory technologies as well as emerging computing systems for high-density …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing
The development of bioinspired electronic devices that can mimic the biological synapses is
an essential step towards the development of efficient neuromorphic systems to simulate the …
an essential step towards the development of efficient neuromorphic systems to simulate the …
Cellulose nanocrystal based Bio‐Memristor as a green artificial synaptic device for neuromorphic computing applications
Nanocomposites based on biomaterials are promising candidates for emerging green‐
electronics benefiting from environment‐friendly, renewable, biocompatible, and …
electronics benefiting from environment‐friendly, renewable, biocompatible, and …
Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing
Memristors with controllable resistive switching (RS) characteristics gain significant attention
for neuromorphic computing applications in high-density memory and artificial synapses …
for neuromorphic computing applications in high-density memory and artificial synapses …
Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices
A controllable and reversible transition of volatile and non-volatile resistive switching is
presented in Ag/indium-gallium-zinc oxide (IGZO)/manganese oxide (MnO)/Pt bilayer …
presented in Ag/indium-gallium-zinc oxide (IGZO)/manganese oxide (MnO)/Pt bilayer …
Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system
In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrO x/Pt capacitor
structure for neuromorphic engineering. The chemical and material compositions and the …
structure for neuromorphic engineering. The chemical and material compositions and the …
Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light
The development of the novel three-terminal hybrid lateral memristor and transistor device
called memtransistor, has successfully provided additional functionalities in memory …
called memtransistor, has successfully provided additional functionalities in memory …
Solvothermal synthesis of TiO2 nanospheres for non-volatile memory and synaptic learning applications
In this study, we used the one-pot solvothermal method to synthesize the TiO 2 nanospheres
(NSs) and used them for non-volatile memory and neuromorphic computing applications …
(NSs) and used them for non-volatile memory and neuromorphic computing applications …
Forming-free bipolar resistive switching characteristics in Al/Mn3O4/FTO RRAM device
The bipolar resistive switching (BRS) phenomenon was demonstrated in Mn 3 O 4 using an
aluminium/Mn 3 O 4/fluorine-doped tin oxide resistive random access memory (RRAM) …
aluminium/Mn 3 O 4/fluorine-doped tin oxide resistive random access memory (RRAM) …