[HTML][HTML] AI-enabled intelligent visible light communications: Challenges, progress, and future
Photonics | Free Full-Text | AI-Enabled Intelligent Visible Light Communications: Challenges,
Progress, and Future Next Article in Journal Performance Enhancement of DWDM Optical Fiber …
Progress, and Future Next Article in Journal Performance Enhancement of DWDM Optical Fiber …
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
A David, MJ Grundmann - Applied Physics Letters, 2010 - pubs.aip.org
To investigate the variation in internal quantum efficiency in InGaN structures, we measure
the differential carrier lifetime of an InGaN/GaN double-heterostructure light-emitting diode …
the differential carrier lifetime of an InGaN/GaN double-heterostructure light-emitting diode …
Quantum efficiency of III-nitride emitters: Evidence for defect-assisted nonradiative recombination and its effect on the green gap
Carrier-lifetime measurements reveal that, contrary to common expectations, the high-
current nonradiative recombination (droop) in III-nitride light emitters is comprised of two …
current nonradiative recombination (droop) in III-nitride light emitters is comprised of two …
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm
Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs
We have fabricated GaN-based light-emitting diodes (LEDs) with different quantum well
(QW) thicknesses to investigate the influence of the quantum confined Stark effect (QCSE) …
(QW) thicknesses to investigate the influence of the quantum confined Stark effect (QCSE) …
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
Staggered InGaN quantum wells (QWs) are investigated both numerically and
experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520 …
experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520 …
3.76-Gbps yellow-light visible light communication system over 1.2 m free space transmission utilizing a Si-substrate LED and a cascaded pre-equalizer network
Recently, visible light communication (VLC) has emerged as a promising communication
method in 6G. To achieve 6G high-speed transmission, wavelength division multiplexing …
method in 6G. To achieve 6G high-speed transmission, wavelength division multiplexing …
Evidence for “dark charge” from photoluminescence measurements in wide InGaN quantum wells
Wide (15-25 nm) InGaN/GaN quantum wells in LED structures were studied by time-
resolved photoluminescence (PL) spectroscopy and compared with narrow (2.6 nm) wells in …
resolved photoluminescence (PL) spectroscopy and compared with narrow (2.6 nm) wells in …
Investigations on AlGaN‐based deep‐ultraviolet light‐emitting diodes with Si‐doped quantum barriers of different doping concentrations
K Tian, Q Chen, C Chu, M Fang, L Li… - physica status solidi …, 2018 - Wiley Online Library
In this work, we investigate the impact of Si doped AlGaN quantum barriers on the optical
powers for [0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV …
powers for [0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV …