Hybrid bonding is the technology for interchip ultrahigh-density interconnect at pitch smaller
than 10 μ m. The feasibility at wafer-to-wafer level bonding with bond pad pitch of sub-0.5 μ …

In this study, the state of the art of Cu–Cu hybrid bonding (HB) will be investigated.
Emphasis is placed on the design, materials, process, fabrications, reliability, challenges …

We have devised a novel process integration technique aimed at minimizing the recess of
Cu pads, successfully achieving ultra-fine 0.4 μm pitch Cu–Cu connections comprising …

Hybrid bonding technology has recently emerged as a promising solution for advanced
semiconductor packaging technologies. However, several reliability issues still pose …

Hybrid bonding pitch scaling is critical to continue to support higher chip to chip bandwidth
at reduced area and power overhead for chip-to-chip signaling. This paper discusses the …

Cu-based hybrid bonding, known for its high density and low latency, is widely applied in big
data throughput scenarios. However, Cu joints are prone to oxidation and perform poorly at …

In this study, the recent advances and trends of Cu–Cu hybrid bonding (HB) will be
investigated. Emphasis is placed on the design, materials, process, fabrications, reliability …

We demonstrate, for the first time, robust 300nm pitch W2W hybrid bonding for advance logic
(CFETs, Logic-SRAM stacking) and memory roadmap products (3D-NAND, 3D-DRAM) …

For wafer-to-wafer Cu/SiCN hybrid bonding with unequal sized pads it was previously
reported that a diffusion based" bulge-out" mechanism mitigates the drastic decrease in …

We report on a reduced thermal budget for hybrid bonding anneal using a single wafer
thermal processing system (TPS). Robust bonding with excellent Cu gap closure and grain …