Heterojunction diodes of ZnS/p-Si have been fabricated using the chemical bath deposition
(CBD) technique at two different deposition durations under both stirring and non-stirring …

In the present work, ZnS/p-Si heterostructures have been prepared at different deposition
durations using well known chemical bath deposition method. The structural, morphological …

We report one-volt TiO 2 thin film transistors (TFTs) with a low-temperature fabrication
process. The TFTs with the 300° C-annealed TiO 2 channel exhibit a high on/off current ratio …

Zinc oxide (ZnO) thin films were grown at 70° C by plasma-enhanced atomic layer
deposition using H 2 O and O 2 plasmas. Plasma oxidants were used in order to improve the …

Semiconductor ZnO aerogels were synthesized by a sol–gel process with different
concentrations (2.5–7.5 wt.%) of Al (n-type) or Na (p-type) and dried under supercritical …

ZnO thin films have been used in various applications such as optoelectronic devices, solar
cell window layers, UV detectors and space applications. The devices based on ZnO should …

Zinc Oxide (ZnO) is a group II–VI metal oxide semiconductor with a direct and wide bandgap
(3.37 eV) and large exciton binding energy (60 meV). It is a biosecure and cost effective …

This comprehensive review explores the significant developments in Schottky diode
technology, focusing on advancements, emerging trends, and key contributions in recent …

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed
electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a …

In this paper, we report a low thermal budget manufacturing method to produce highly
rectifying Schottky diodes with ultrathin ZnO films grown at near room temperature by …