Review of Si-based GeSn CVD growth and optoelectronic applications

Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si

Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri… - Acs …, 2019 - ACS Publications
Lasing from direct bandgap group-IV GeSn alloys has opened a new venue for the
development of Si-based monolithic laser. In this work, we demonstrate optically pumped …

SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

O Olorunsola, A Said, S Ojo, H Stanchu… - Journal of Physics D …, 2022 - iopscience.iop.org
Recent studies of SiGeSn materials and optoelectronic devices hold great promise for
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …

GeSnOI mid-infrared laser technology

B Wang, E Sakat, E Herth, M Gromovyi… - Light: Science & …, 2021 - nature.com
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers
manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap …

[HTML][HTML] All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi… - Applied Physics …, 2018 - pubs.aip.org
In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-
quantum-well structures were demonstrated. Lasing performance was investigated via two 4 …

GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

A Slav, I Dascalescu, AM Lepadatu… - … Applied Materials & …, 2020 - ACS Publications
The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high
technological interest for many application fields, such as the Internet of things or pollution …

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

MA Nawwar, MSA Ghazala, LMS El-Deen… - RSC …, 2022 - pubs.rsc.org
Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

Epitaxial GeSn obtained by high power impulse magnetron sputtering and the heterojunction with embedded GeSn nanocrystals for shortwave infrared detection

I Dascalescu, NC Zoita, A Slav, E Matei… - … applied materials & …, 2020 - ACS Publications
GeSn alloys have the potential of extending the Si photonics functionality in shortwave
infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a …

Review of Ge (GeSn) and InGaAs avalanche diodes operating in the SWIR spectral region

Y Miao, H Lin, B Li, T Dong, C He, J Du, X Zhao, Z Zhou… - Nanomaterials, 2023 - mdpi.com
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …

GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection

A Slav, C Palade, C Logofatu… - ACS Applied Nano …, 2019 - ACS Publications
Detection in short-wave infrared (SWIR) has become a very stringent technology
requirement for developing fields like hyperspectral imaging or climate changes. In a market …