In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite
form,(0001) oriented, are summarized. Thin films of several elements—manganese, nickel …

A Δ-shaped gate GaN-based E-mode vertical current-aperture vertical electron transistor
(CAVET) device with a boron-doped current block layer (B-CBL) on an n+ GaN substrate is …

A thin film of gallium nitride (GaN) was successfully grown onto p-Si by a radio-frequency
(RF) magnetron sputter for different argon flows. X-ray diffraction (XRD) results proved that …

Band bending and Fermi level pinning at GaN (0001) surfaces have proved controversial
despite their fundamental importance. By combining Kelvin probe, surface photovoltage and …

Abstract Gallium nitride (GaN)(GaN) thin films were grown on the Al _ 2 O _ 3\left (0 0 0
1\right) Al 2 O 3 0001 substrate using radio frequency (RF) magnetron sputtering under …

GaN thin film was successfully produced on n-Si\left (100\right) nS i 100 substrate by RF
magnetron sputter under different RF power. Experimental measurement techniques such …

In this letter, we report the fabrication of an enhancement-mode V-groove metal oxide
semiconductor field-effect transistor on semi-polar (11-22) GaN platform. A wet …

Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today's
production of blue and white light emitting diodes (LEDs). Both surface area and number of …

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the
wurtzite form,(0001) oriented are summarized. Thin films of several elements—manganese …

We investigated the photoelectrochemical etching of n-GaN in H 3 PO 4 and KOH as a
function of electrolyte concentration, potential and light intensity. Etch rates measured by …