Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

We report on the growth of monoclinic β-and orthorhombic κ-phase Ga 2 O 3 thin films using
liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H …

Diamond wire sawing (DWS) is the primary stage in the semiconductor industry for slicing
hard and brittle materials, delivering high surface quality with minimum kerf losses. Despite …

We detail scientific and engineering advances which enable the controlled spalling and
layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's …

Chemical mechanical polishing (CMP) is a well-known technology that can produce
surfaces with outstanding global planarization without subsurface damage. A good CMP …

Silicon (Si)-based semiconductor devices have long dominated the power electronics
industry and are used in almost every application involving power conversion. Examples of …

The emergence of DC fast chargers for electric vehicle batteries (EVBs) has prompted the
design of ad-hoc microgrids (MGs), in which the use of a solid-state transformer (SST) …

The outstanding hardness and wear resistance of diamond materials pose significant
challenges in their grinding processes for semiconductor substrate materials. To overcome …

In Part I of a two-part report, we provide a detailed and systematic review of the latest
progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing …