In this paper, a novel superjunction MOSFET with ohm contact in the termination region and
dual Schottky contacts in the cell region is proposed and experimentally demonstrated. The …

A multiepi (ME) superjunction (SJ) MOSFET with a lightly-doped MOS-channel diode (MCD)
is studied by TCAD simulations. When the p-pillar is formed by the ME process, the …

In this paper, a novel approach to suppress the inhomogeneous reverse recovery behavior
of the body diode in Superjunction MOSFET is proposed and experimentally demonstrated …

A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode
(BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper …

A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and
numerically investigated in this article. The P-base Schottky diode formed by the P-base …

This paper explores the operation mechanism of the superjunction structure in RC-IGBTs
based on carrier distribution and analyzes the advantages and challenges associated with …

High reverse recovery charge (Q RR) and high switching losses have become the main
factors that constrain the performance and application area of a superjunction MOSFET (SJ …

With the increase in transistor integration in Very Large Scale Integration (VLSI) design,
energy efficiency plays a major role as a design parameter. One of the key ideas used in …

In this article, a novel SiC superjunction MOSFET with Schottky diode containing N-and P-
type barrier is proposed to improving short-circuit and reverse recovery ruggedness …

In this article, a novel silicon adiabatic circuit is proposed for low power applications. To
achieve efficient performance, the charging and the discharging diodes in the energy …