In the paper the problem of modelling thermal properties of semiconductor devices with the
use of compact models is presented. This class of models is defined and their development …

The multichip insulated gate bipolar transistor (IGBT) module has been widely used in the
converter with high-power capacity. However, multichip IGBT module usually suffers from …

In this article, the problem of modeling the thermal properties of the IGBT using a nonlinear
compact thermal model is considered. This model has the form of an electrical network. In …

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon
carbide MOSFET power module. The approach is based on a full circuital representation of …

Under the operating conditions of high power and high switching frequency, an insulated
gate bipolar transistor (IGBT) chip can produce relatively large power loss, causing the …

In the paper, selected problems that are related to the measurements of thermal parameters
of power MOSFETs that are placed on a common heat sink are analysed. The application of …

In the article, a new method to improve the accuracy of the insulated-gate bipolar transistor
(IGBT) junction temperature computations in the piecewise linear electrical circuit simulation …

This article proposes effective methods of measurements and computations of internal
temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted …

This paper presents a compact nonlinear thermal model of pulse transformers. The
proposed model takes into account differentiation in values of the temperatures of a …

Accurately predicting the temperature of semiconductor devices is very important in the
initial design of the power electronics converter. RC thermal models derived from the well …