In this study, for the concentrations of x= 0.0, 0.25, 0.5, 0.75 and 1.0, the calculations of the
physical properties of GaP1–x N x mixed alloys are presented. To perform these …

This study presents two-wavelength excited photocurrent (TWEPC) measurements in GaP
1− x N x grown by metalorganic vapor phase epitaxy. TWEPC measurements reveal that …

Here, we report on the structural, optical and magneto-optical properties of as-grown and
thermal annealed GaPN thin films containing different N concentrations grown by Solid …

Presence and influence of nonradiative recombination (NRR) centers in an intermediate
band (IB)‐type material, GaP1–xNx (x= 0.75%), are studied by two‐wavelength excited …

In this study, we examined the E− band luminescence of a GaAs: N δ-doped superlattice
(SL) grown by metal organic vapor phase epitaxy with 0.15% nitrogen (N) using two …

Investigation on cascade photo‐excitation via intermediate band (IB) is promising for
improving the efficiency of IB‐type solar cells (IBSCs). Increasing nitrogen (N) concentration …

The intensity of photoluminescence (PL) changes when an additional below‐gap excitation
(BGE) light modifies the electronic occupation of one of the crystalline defects acting as …

We report the influence of laser irradiation on photoluminescence (PL) intensity to study the
evolution of nonradiative recombination centers in GaP 1− x N x alloys. PL mapping …

Among renewable energies, power generation using solar cells is drawing attention.
However, the problem with solar power generation lies in its generation cost. It is essential to …

Crystalline defects in semiconductors form localized energy states inside the forbidden
energy gap and act as nonradiative recombination (NRR) levels. They accelerate …