The resonant tunneling diode (RTD) has been widely studied because of its importance in
the field of nanoelectronic science and technology and its potential applications in very high …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

A compact analytical model of current transfer was developed to estimate the characteristics
of heterostructured devices. The absence of empirical correction factors and the explicit …

Анализ современных исследований физики резонансно-туннельных диодов (РТД),
показывает, что на их функционирование существенное влияние могут оказывать …

When modeling devices based on AlAs/GaAs heterostructures, an important factor to
consider is intervalley electron scattering at heterointerfaces. This paper shows an approach …

Mixing between Γ and X valleys of the conduction band in GaAs–Ga1–x Alx As quantum
wells is investigated taken into account the effect of applied hydrostatic pressure. This effect …

The mixing between the Γ and X conduction-band valleys in GaAs-Ga 1-x Al x As quantum
wells is investigated by using a phenomenological model which takes into account the …

A numerical algorithm for the solution of the two‐dimensional effective‐mass Schrödinger
equation for current‐carrying states, the quantum transmitting boundary method, is extended …

By applying a fully self-consistent solution of the Schrodinger-Poisson equations, a simple
unified approach has been developed in order to study the gate current and gate …

Abstract Metal-Insulator-Metal (MIM), Metal-Insulator-Insulator-Metal (MIIM), and Metal-
Insulator-Insulator-Insulator-Metal (MIIIM) quantum tunneling diodes have been designed …