A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance
We utilize electrically detected magnetic resonance (EDMR) measurements to compare high-
field stressed, and gamma irradiated Si/SiO 2 metal–oxide–silicon (MOS) structures. We …
field stressed, and gamma irradiated Si/SiO 2 metal–oxide–silicon (MOS) structures. We …
Observation of radiation-induced leakage current defects in MOS oxides with multifrequency electrically detected magnetic resonance and near-zero-field …
We report high and low-frequency electrically detected magnetic resonance measurements
and near-zero-field magnetoresistance measurements on radiation-induced leakage …
and near-zero-field magnetoresistance measurements on radiation-induced leakage …
A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO2‐Based Ferroelectric Memory
W Zhang, G Li, X Long, L Cui, M Tang… - … status solidi (b), 2020 - Wiley Online Library
The γ‐ray total dose radiation effects on Zr‐doped HfO2 (HfZrO) and Al‐doped HfO2 (HfAlO)
ferroelectric thin films are comparatively studied. The J–E, P–E, C–V, εr–f curves and fatigue …
ferroelectric thin films are comparatively studied. The J–E, P–E, C–V, εr–f curves and fatigue …
A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy
Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method
available to study electrically active point defects in semiconductor devices. Most EDMR …
available to study electrically active point defects in semiconductor devices. Most EDMR …
[HTML][HTML] Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films
We report on the electrical detection of electron nuclear double resonance (EDENDOR)
through spin-dependent tunneling transport in an amorphous hydrogenated silicon thin film …
through spin-dependent tunneling transport in an amorphous hydrogenated silicon thin film …
Impact of Radiation Effect on Ferroelectric Al-Doped HfO2 Metal-Ferroelectric- Insulator-Semiconductor Structure
W Zhang, G Wang, M Tang, L Cui, T Wang, P Su… - IEEE …, 2020 - ieeexplore.ieee.org
The γ-ray total dose radiation effects on ferroelectric Al-doped HfO 2 (HfAlO) thin films with
an n-type Si substrate were studied. The IV, PV, CV and fatigue characteristics of the HfAlO …
an n-type Si substrate were studied. The IV, PV, CV and fatigue characteristics of the HfAlO …
A multifield and frequency electrically detected magnetic resonance study of atomic-scale defects in gamma irradiated modern MOS integrated circuitry
KJ Myers, RJ Waskiewicz, PM Lenahan… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The role of specific atomic-scale defects involved in total ionizing dose radiation in the metal-
oxide-semiconductor field-effect transistors of the 1980s and 1990s was identified in large …
oxide-semiconductor field-effect transistors of the 1980s and 1990s was identified in large …
The effect of γ-ray irradiation on voltage-controlled magnetism of HfZrO/CoFeB Hall bar device
We investigate the total ionizing dose (TID) effect on the voltage-controlled magnetic
anisotropy (VCMA) Hall bar device based on HfZrO/CoFeB hybrid film. Devices under test …
anisotropy (VCMA) Hall bar device based on HfZrO/CoFeB hybrid film. Devices under test …
Effect of Proton Irradiation Fluence on the Linearity and Symmetry of Conductance Tuning of a HfOx/TiOx Heterojunction-Based Memristor
J Yan, H Song, X Zhong, J Wang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Binary metal oxide memristor-based artificial neural synapses offer the advantages of high-
density information storage, high-efficiency computing, low power consumption, and strong …
density information storage, high-efficiency computing, low power consumption, and strong …
Exploring atomic-scale defects related to time-dependent dielectric breakdown with spin-dependent measurements
S Moxim - 2022 - etda.libraries.psu.edu
Time-dependent dielectric breakdown (TDDB) has been an important MOSFET reliability
issue for decades, yet it is not well understood at the atomic scale. It is clear that atomic …
issue for decades, yet it is not well understood at the atomic scale. It is clear that atomic …