We review the recent developments in GaAs-based 1.55-mum lasers grown by molecular
beam epitaxy (MBE). While materials growth is challenging, the growth window appears to …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

Dilute nitride films with a roughly 1 eV band gap can be lattice-matched to gallium arsenide
and germanium, and therefore could become a critical component in next-generation …

GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are
characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations of …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

Mechanisms of dislocation generation and methods of crystal growth are two historically rich
areas of scientific study. These two fields converge in the area of metamorphic epitaxial …

In the past few years, GaInNAsSb has been found to be a potentially superior material to
both GaInNAs and InGaAsP for communications wavelength laser applications. It has been …

Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …

Electronic properties of III-V semiconductor alloys are examined using first principles, with
the focus on the spatial localization of electronic states. We compare localization at the band …

The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was
observed from a 20 Â 2400 μm as-cleaved device with a room-temperature continuous …