Surface reconstructions on GaAs (001)
A Ohtake - Surface Science Reports, 2008 - Elsevier
This paper reviews the recent experimental findings on the atomic structures on the (001)
surface of GaAs. We systematically studied the structure and composition of the GaAs (001) …
surface of GaAs. We systematically studied the structure and composition of the GaAs (001) …
Passivation of III–V surfaces with crystalline oxidation
P Laukkanen, MPJ Punkkinen, M Kuzmin… - Applied Physics …, 2021 - pubs.aip.org
Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …
minimize the impact of point defects on device performance has been a dominant theme in …
Analytic bond-order potential for the gallium arsenide system
An analytic, bond-order potential (BOP) is proposed and parametrized for the gallium
arsenide system. The potential addresses primary (σ) and secondary (π) bonding and the …
arsenide system. The potential addresses primary (σ) and secondary (π) bonding and the …
Analytic bond-order potentials for modelling the growth of semiconductor thin films
Interatomic potentials for modelling the vapour phase growth of semiconductor thin films
must be able to describe the breaking and making of covalent bonds in an efficient format so …
must be able to describe the breaking and making of covalent bonds in an efficient format so …
Super low density InGaAs semiconductor ring-shaped nanostructures
We report on the ability to fabricate super low density InGaAs semiconductor ring-shaped
nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we …
nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we …
Design of nanostructure complexes by droplet epitaxy
We demonstrate a number of unseen self-assembled nanostructure complexes fabricated
on various GaAs surface indexes by droplet epitaxy. Even under identical growth conditions …
on various GaAs surface indexes by droplet epitaxy. Even under identical growth conditions …
[HTML][HTML] First-principles study of structural, electronic, and optical properties of surface defects in GaAs (001)-β2 (2x4)
We performed first-principles calculations based on density functional theory (DFT) to
investigate the role of point defects in the structural, electronic, and optical properties of the …
investigate the role of point defects in the structural, electronic, and optical properties of the …
Soft x-ray photoemission of clean and sulfur-covered polar ZnO surfaces: A view of the stabilization of polar oxide surfaces
The two polar surfaces of ZnO were investigated by soft x-ray photoemission spectroscopy.
Surface components due to variation in the Madelung energy were identified in …
Surface components due to variation in the Madelung energy were identified in …
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
TW Pi, HY Lin, TH Chiang, YT Liu, YC Chang… - Applied surface …, 2013 - Elsevier
Abstract The surface As/Ga atoms 3d core-level spectra of the atomically clean GaAs (1 1 1)
A-2× 2, GaAs (0 0 1)-2× 4, and GaAs (0 0 1)-4× 6 surfaces were firstly presented using high …
A-2× 2, GaAs (0 0 1)-2× 4, and GaAs (0 0 1)-4× 6 surfaces were firstly presented using high …
Surface studies by low-energy electron diffraction and reflection high-energy-electron diffraction
P Laukkanen, J Sadowski, M Guina - … Research: Experimental Techniques, 2012 - Springer
In this chapter, we present the basic concepts of the low-energy electron diffraction (LEED)
and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to …
and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to …